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NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose
Description: The NTE123A (NPN) and NTE159M (PNP) are widely used "Industry Standard" complementary transistors in a TO18 type case designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies. Features: D Low Collector Saturation Voltage: 1V (Max) D High Current Gain-Bandwidth Product: fT = 300MHz (Min) @ IC 20mA Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Base Voltage, VCBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/C Total Device Dissipation (TC = +25C), PD NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/C NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C
Electrical Characteristics: (TA = 25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage NTE123A NTE159M Collector-Base Breakdown Voltage NTE123A NTE159M Emitter-Base Breakdown Voltage NTE123A NTE159M Collector Cutoff Current NTE123A NTE159M Collector Cutoff Current NTE123A ICBO ICEX VCE = 60V, VEB(off) = 3V VCE = 30V, VBE = 500mV VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = +150C NTE159M VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = +150C Emitter Cutoff Current (NTE123A Only) Base Cutoff Current NTE123A NTE159M ON Characteristics DC Current Gain NTE123A hFE VCE = 10V IC = 0.1mA, Note 1 IC = 1mA IC = 10mA, Note 1 IC = 10mA, TA = -55C IC = 150mA, Note 1 VCE = 1V, IC = 150mA, Note 1 VCE = 10V IC = 500mA, Not e 1 NTE159M IC = 0.1mA IC = 1mA IC = 10mA IC = 150mA, Note 1 IC = 500mA, Note 1 Collector-Emitter Saturation Voltage NTE123A VCE(sat) IC = 150mA, IB = 15mA, Note 1 IC = 500mA, IB = 50mA, Note 1 NTE159M IC = 150mA, IB = 15mA, Note 1 IC = 500mA, IB = 50mA, Note 1 35 50 75 35 100 50 40 75 100 100 100 50 - - - - - - - - - - - - - - - - - - - - - - - - 300 - - - - - 300 - 0.3 1.0 0.4 1.6 V V V V IEBO IBL VEB = 3V, IC = 0 VCE = 60V, VEB(off) = 3V VCE = 30V, VEB(off) = 500mV V(BR)EBO IE = 10A, IC = 0 V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 10mA, IB = 0 40 60 75 60 6 5 - - - - - - - - - - - - - - - - - - - - - 10 50 0.01 10 0.01 10 10 20 50 V V V V V V nA nA A A A A nA nA nA Symbol Test Conditions Min Typ Max Unit
-
- - - - - - - -
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TA = 25C unless otherwise specified)
Parameter ON Characteristics (Cont'd) Base-Emitter Saturation Voltage NTE123A NTE159M Small-Signal Characteristics Current Gain-Bandwidth Product NTE123A NTE159M Output Capacitance Input Capactiance NTE123A NTE159M Input Impedance (NTE123A Only) hie hre hfe hoe rbCc NF Re(hie) Cobo Cibo fT IC = 20mA IC = 50mA VCE = 20V, f = 100MHz, Note 2 300 200 - - - VCE = 10V, f = 1kHz VCE = 10V, f = 1kHz VCE = 10V, f = 1kHz VCE = 10V, f = 1kHz 2.0 0.25 - - 50 75 5 25 - - - - - - - - - - - - - - - - - - - - - 8 25 30 8.0 1.25 8 4 300 375 35 200 150 4 60 mhos mhos ps dB MHz MHz pF pF pF k k x 10-4 x 10-4 VBE(sat) IC = 150mA, IB = 15mA, Note 1 IC = 500mA, IB = 50mA, Note 1 IC = 150mA, IB = 15mA, Note 1 IC = 500mA, IB = 50mA 0.6 - - - - - - - 1.2 2.0 1.3 2.6 V V V V Symbol Test Conditions Min Typ Max Unit
VCB = 10V, IE = 0, f = 100kHz VBE = 0.5V IC = 0, f = 100kHz VBE = 2V IC = 1mA IC = 10mA IC = 1mA IC = 10mA IC = 1mA IC = 10mA IC = 1mA IC = 10mA
Voltage Feedback Ratio (NTE123A Only) Small-Signal Current Gain (NTE123A Only) Output Admittance (NTE123A Only) Collector-Base Time Constant (NTE123A Only) Noise Figure (NTE123A Only) Real Part of Common-Emitter High Frequency Input Impedance (NTE123A Only) Switching Characteristics NTE123A Delay Time Rise Time Storage Time Fall Time NTE159M Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
IE = 20mA, VCB = 20V, f = 31.8MHz IC = 100A, VCE = 10V, RS = 1k, f = 1kHz IC = 20mA, VCE = 20V, f = 300MHz
td tr ts tf ton td tr toff ts tf
VCC = 30V, VBE(off) = 500mV, IC = 150mA, IB1 =- 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA VCC = 30V, IC = 150mA, IB1 = 15mA
- - - - - - - - - -
- - - - 26 6 20 70 50 20
10 25 225 60 45 10 40 100 80 30
ns ns ns ns ns ns ns ns ns ns
VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
.230 (5.84) Dia Max .195 (4.95) Dia Max
.210 (5.33) Max
.030 (.762) Max
.500 (12.7) Min
.018 (0.45) Base Emitter Collector
45
.041 (1.05)

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